general release d ocument consult factory for current revision revisions revision description approved date - initial release luis vargas 5/28/2008 a updated part numbers luis vargas 1/9/09 specification control drawing q - tech corporation 10150 w. jefferson blvd. culver city, ca 90232 - 3510 prepared by : luis vargas d ate 6/5/08 low profile 32 pin flat pack hybrid crystal oscillator, tcxo, class s, standard design for sine wave up to 225 mhz unless otherwise specified, dimensions are in inches. tolerances: 3 place decimal = .005 2 place decimal = .02 1 place decimal = .1 fractions = 1/16 angles = 2 degrees checked by: quality date drawing no.: qt82 4, qt825 and qt826 sine - wave 32 flat pack revision a rel eased by: document control approved by: engineering date scale none size a cage code 51774 sheet 1 of 7 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 temp, deg c freq error, ppm example 1 of temperature stability example 2 of temperature stability 50mhz tcxo ,vcc=12v,+25 c 9/17/08 -180 -170 -160 -150 -140 -130 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 1 10 100 1000 10000 100000 frequenc y offset, hz l(f), db c 0 0.05 0.1 0.15 0.2 0.25 0.3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 frequency drift, ppm elapsed time, days aging data
qt82 4, qt825 and qt826 sine - wave 32 flat pack rev. q - tech corpor a tion 10150 w. j efferson blvd. culver city, ca 90232 size a cage no. 51774 sheet 2 of 7 a 1.0 scope this specification establishes the detail requirements for low profile hybrid, hermetically s ealed, sine - wave output temperature compensated crystal oscillators (tcxo) for use in space flight missions . 2.0 applicable documents the following documents of the latest issue form a part of this drawing to the extent specified herein. 2.1 specificati ons and standards specifications military mil - s - 19500 semiconductor devices, general specification for mil - prf - 55310 crystal oscillators, general specification for mil - prf - 38535 integrated circuits, (microcircuits) manufacturing, general specification for mil - prf - 38534 hybrid microcircuits, general specification for standards military mil - std - 202 test methods for electronic and electrical component parts mil - std - 883 test methods and procedures for microelectronics mil - std - 1686 electrostatic disch arge control program for protection of electrical and electronics parts, assemblies and equipment. 2.2 conflicting requirements in the event of conflict between requirements of this specification and other requirements of the applicable detail drawing , the precedence in which requirements shall govern, in descending order, is as fo l lows: a) applicable customer purchase order. b) applicable detail drawing. c) this specification. d) other specifications or standards referenced in 2.1 herein . 2.3 customer purchase order special requirements additional special requirements shall be specified in the applicable customer purchase order when additional requirements or modifications specified herein are needed for co m pliance to special program or product line requir e ments. 3.0 performance requirem ents 3.1 general definition the tcxo is a high reliability signal generator that provides a sine -wave output. the tcxo has been designed to operate in a spaceflight environment with an expected lifetime in excess of 15 years. lifetime is defined as the sum of operational and storage environments.
qt82 4, qt825 and qt826 sine - wave 32 flat pack rev. q - tech corpor a tion 10150 w. j efferson blvd. culver city, ca 90232 size a cage no. 51774 sheet 3 of 7 a 3.1.1 electrical characteristics parameter symbol conditions value unit frequency nom. fo - see part number generation table mhz supply voltage, nom. vs vs 5% see part number generati on table v input current, max. is vs, nom. / ta=+25 c 30 50 ma freq. stability vs. temperature (including 5% load change and 5% input voltage change) contact factory for other options available see part number generation table ppm electric al frequency adjustment min. (when specified) via an external se lect - at - test resistor connected from pin 1 to ground 2) via external tuning voltage 5.0 see part number generation table ppm aging max 0.2 ppm short term stability contact factory for other options available 30 to 75 3rd 75.1 to 225 3 rd x mhz output level min. sine class s, 100 krads (si) total dose min see part number generation table dbm harmonics max. - 20 - 20 dbc sub - harmonics max. n/a - 20 dbc phase noise @ freq. offset ( contact factory for options available dbc/hz dbc/hz dbc/hz dbc/hz dbc/hz spurious under static conditions. met by design, not tested. - 70 dbc 3.2 absolute maximum rating supply voltage 0 to +16.5 vdc dc i nput current 50 ma maximum storage temperature range - 62 c to +125 c lead temperature (soldering, 10 seconds) 300 c 3.2. 1 physical characteristics 3.2. 1 .1 dimensions - the tcxo outline dimensions and terminal connections shall be as shown in figure 1 herein. 3.2. 1 .2 weight - the tcxo shall weigh less than or equal to 25 grams. 3.2. 1 .3 materials - the tcxo package body and lead finish shall be gold in accordance with mil - prf - 38534.
qt82 4, qt825 and qt826 sine - wave 32 flat pack rev. q - tech corpor a tion 10150 w. j efferson blvd. culver city, ca 90232 size a cage no. 51774 sheet 4 of 7 a 3.2. 2 environmental conditions sine vibration mil - std - 202, method 204, tc d random vibration mil - std - 202, method 214 tc i - k (15 minutes per axis) shock mil - std - 202, method 213, tc f acceleration mil - std - 883, method 2001, tc a altitude 50,000 feet minimum to deep space radiation radiation testing is not performed , but these tcxos have been acceptable for use in environments up to 100k rads by analysis of the components used. only bipolar semiconductors are employed. a copy of the parts list and materials can be provided for review. the electronics used in the tcxo shall be single event latchup free. electrostatic discharge sensitivity the tcxo supplied to this drawing shall be considered to be electrostatic di s charge sensitive and require further protection and shall use one of the packaging requirements in accord ance with mil - prf - 38534, category a, section 5.3.2.4 transportability. the tcxo shall be capable of being transported by air, ship or road when packaged in a suitable container. 3.3 design and construction the design and construction of the crystal oscillato r shall be as specified herein. as a minimum, the oscillators shall meet the design and construction requirements of mil - prf - 55310, e x cept element evaluation shall be as specif ied in 3.3.1 . operation design, construction & component screen (see 3.3.2) m il - prf - 55310 class s workmanship m883, method 2017 for class s screening mil - prf - 55310 class s non - destruct wire bond pull 100%, m883, method 2023 (2.4 grams) internal visual mil - std - 883, methods 2017 & 2032 condition k (class s) . during the time interval between final internal visual inspection and prepar a tion for sealing, hybrid crystal oscillators shall be stored in a dry, controlled environment as defined in mil - std - 883, method 2017 or in a vacuum bake oven. stabilization bake 48 hrs minimum @ +150 c m883, method 1008 tc b thermal shock m883, method 1011, tc a temperature cycling m883, method 1010, tc b constant acceleration m883, method 2001, tc a (5000 gs, y1 axis only) seal test (fine & gross) 100% method 1014, (tc a1 for fine leak a nd tc c for gross leak) pind m883, method 2020, tc b electrical test frequency, output levels, input current@ +25 c burn - in (powered with load) +125 c for 240 hours electrical test frequency, output levels, input current @ +25 c & temp extremes list ed on the electrical specification radiographic m883, method 2012 class s group a 100% group b (30 day aging @ +70 c) 100% external visual 883 method 2009
qt82 4, qt825 and qt826 sine - wave 32 flat pack rev. q - tech corpor a tion 10150 w. j efferson blvd. culver city, ca 90232 size a cage no. 51774 sheet 5 of 7 a 3.3.1 all piece parts shall be derived from lots that meet the element evaluation requir e ment s of mil - prf - 38534, class k , with the following exceptions: active e lements a) visual inspection of silicon on sapphire microcircuits. semicircular crack(s) or multiple adjacent cracks, not in the active area, starting and terminating at the edg e of the die are acceptable. attached (chip in place) sapphire is nonconductive material and shall not be considered as foreign material and will be considered as nonconductive mat e rial for all inspection criteria. b) subgroup 4, scanning electron microsco pe (sem) inspection. the manufacturer may allow the die distributor, at his option, to select two (2) dice from a waffle pack (containing a maximum quantity of 100 die), visually i n spect for the worst case metallization of the 2 dice, and take sem photogra phs of the worst case. c) subgroup 5 radiation tests. subgroup 5 radiation tests are not required unless otherwise spec i fied in the detail purchase order. 3.3.2 processes - processes used for manufacturing the tcxo are selected on the basis of their ab ility to meet the quality requirements for space high reliability manufacturing. travelers or process cards are used in the manufacturing and testing of all of the tcxo series, and might be available for customer review. copies of these travelers can be pr ovided with the tcxos at time of shipment , if so specified on the purchase order. 3.3.3 interchangeability - each tcxo shall be interchangeable without using a special selection process. 3.3. 4 product marking - each unit shall be permanently marked with th e manufacturer's name or symbol, part number, lot date code number, and serial number. the unit shall be marked with the outline of an equilateral tr i angle near pin 1 to show that it contains devices which are sensitive to electrostatic discharge. 3.4 par ts program devices delivered to this specification represent the standardized parts, materials and processes (pmp) program developed, implemented and certified for advanced applications and extended environments. 3.4.1 quartz crystal resonator - the crys tal resonator used shall be constructed using a 4 point mount premium synthetic swept quartz and procured to q - t ech scd . ( for the engineering models, non - swept quartz may be used ). 3.5 traceability requirements material, element and process traceability re quirements shall be as specified by mil - prf - 38534 for c lass k hybrids. 3.6 data 3.6.1. design documentation - when required by the purchase order, design, topography, process and flow charts for all assembly/inspection and test operation for devices to be supplie d under this specification on the initial procurement shall be established and shall be available in - plant for review by the procuring activity upon request. this design document a tion shall be sufficient to depict the physical and electrical construction of the devices supplied under the specification and shall be traceable to the specific parts, drawings or part type numbers to which it applies, and to the production lot(s) and inspection lot codes under which devices are manufactured and tested so that r evisions can be identified.
qt82 4, qt825 and qt826 sine - wave 32 flat pack rev. q - tech corpor a tion 10150 w. j efferson blvd. culver city, ca 90232 size a cage no. 51774 sheet 6 of 7 a 3.6.2. technical data package - when required by the purchase order, the following d e sign documentation and information is deliverable 30 days prior to the start of production. the technical data package shall consist of the following: a) assembly drawing(s). b) all electrical schematics and drawings not considered proprietary . c) the assembly and screening travelers to be used on - line to manufacture the devices supplied to this specification. d) parts and materials list. 3.7 test report a test report is supplied with each shipment of oscillators and includes the following inform a tion, as a minimum: a) a certificate of conformance to all specifications and purchase order requirements. as a minimum, the ce r tificate of conformance shall include the following information: purchase order number. applicable part number. manufacturer s lot number. lot date code. b) parts and materials traceability information. c) certificate of crystal sweeping. d) manufacturing lot traveler. e) screening attributes and var iables data as applicable. f) quality conformance inspection attributes and variables data as applicable. g) radiographic inspection negatives. 3.8 engineering models engineering models are fit, form, and function representative of flight models and of commercial c onstruction using commercial parts of same generic type as flight models. completed oscillators are not screened. note s : this oscillator is offered to meet the specifications above and is not guaranteed to meet any other requirements .
qt82 4, qt825 and qt826 sine - wave 32 flat pack rev. q - tech corpor a tion 10150 w. j efferson blvd. culver city, ca 90232 size a cage no. 51774 sheet 7 of 7 a 1 16 17 32 1.015 max. 30x .050 ?.005 non-accumulative 32x .015 ?.003 2x .750 .325 ?.025 2 places 32x .010 ?.002 .200 max. 32x .072 ?.007 esd symbol for pin no. 1 d/c s/n q-tech usa part number frequency 1.015 max. typ. ref. 4x r. 025 max. 2x .125 ref. ? part number generation engineering models are designated by adding "e" in front of the part number. series output type and supply voltage temperature range ( c) stability over temperature frequency range (mhz) external tuning 4: sine wave +3dbm ..5v n: 0 +50......... 1 ppm 10 225 x : no tuning 5: sine wave +7dbm .12v p : 0 +70......... 1 ppm r: external resistor 6: sine wave 7dbm .,15v q: 0 +70......... 2 ppm v: external voltage r: 0 +70.......... 5 ppm u: - 20 +70....... 1 ppm v: - 20 +70....... 2 ppm w: - 20 +70...... 5 ppm x: - 40 +85....... 4 ppm y: - 40 +85....... 5 ppm z: - 40 +85....... 10 ppm qt82: 32 pin flat pac k (available from 10 to 225 mhz) (see note 1 below) 1. variations from standard specification are available, please contact factory. example: qt8 2 5u - 100.000000 - r would be a hf tcxo, 32 pin smd flat pack, sine - wave 12 volts, stability 1 ppm over - 20 +70 c, @ 100 mhz with external tuning via external resistor. figure 1 interfa ce control drawing 32 pin flat - pack pin no. designation 1 - 3 nc 4 external frequency adjust ment (when specified) 5 ground/case 6 - 10 nc 11 supply voltage 12 rf output 13 supply voltage 14 - 32 nc notes: dimensions are in inches. lead numbers are for reference only and are not marked on the unit. a triangle symbol is marked on the corner of the package to indicate pin 1 all pins with nc function may not be connected as external tie or connections (pins may be connected internally).
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